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Unigroup

TTD70N07A Datasheet Preview

TTD70N07A Datasheet

N-Channel Trench MOSFET

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TTD70N07A, TTP70N07A
Wuxi Unigroup Microelectronics CO.,LTD.
70V N-Channel Trench MOSFET
Features
Trench Power Technology
Low RDS(ON)
Low Gate Charge
Optimized for Fast-switching Applications
Product Summary
VDS
RDS(ON) (at VGS=10V)
ID (at VGS=10V)
70V
< 10.8mΩ
70A
Applications
Synchronous Rectification in DC/DC and AC/DC Converters
Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
Device
TTD70N07A
TTP70N07A
Package
TO-252
TO-220
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (VGS = 0V)
Continuous Drain Current
Pulsed Drain Current
TC = 25ºC
TC = 100ºC
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation
(note3) TC = 25ºC
TC = 100ºC
Operating Junction and Storage Temperature Range
Thermal Resistance
(note1)
(note2)
VDSS
ID
IDM
VGSS
EAS
IAs
PD
TJ, Tstg
Parameter
Symbol
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
V1.0
RthJC
RthJA
1
Marking
70N07A
70N07A
Value
70
70
49
280
±20
79
23
120
60
-55~+175
Unit
V
A
A
V
mJ
A
W
W
ºC
Value
TO-252, TO-220
1.24
62.5
Unit
ºC/W
www.tsinghuaicwx.com




Unigroup

TTD70N07A Datasheet Preview

TTD70N07A Datasheet

N-Channel Trench MOSFET

No Preview Available !

TTD70N07A, TTP70N07A
Wuxi Unigroup Microelectronics CO.,LTD.
Specifications TJ = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
Dynamic
IGSS
VGS(th)
RDS(on)
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
trr
Qrr
VGS = 0V, ID = 250µA
VDS = 70V, VGS = 0V, TJ = 25ºC
VDS = 70V, VGS = 0V, TJ = 100ºC
VGS = ±20V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 30A
VDS = 10V, ID = 30A
VGS = 0V,
VDS = 35V,
f = 1.0MHz
VDD = 35V, ID = 50A,
VGS = 10V
VDD = 35V, ID = 50A,
RG = 2.5Ω
TC = 25ºC
TJ = 25ºC, ISD = 30A, VGS = 0V
IF = 30A,
diF/dt = 100A/μs
Min.
Value
Typ.
Max.
Unit
68 -- --
V
-- -- 1
μA
-- -- 25
-- -- ±100 nA
2 34 V
--
8.5 10.8
mΩ
17.1 --
--
S
-- 4570 --
-- 1410 --
-- 734 --
-- 70 --
-- 20 --
-- 17 --
-- 8 --
-- 7 --
-- 40 --
-- 15 --
pF
nC
ns
-- -- 70
A
-- -- 280
--
-- 1.2
V
-- 30 --
ns
-- 45 -- nC
Notes
1. Repetitive Rating: Pulse Width limited by maximum junction temperature
2. IAS = 42.5A, L=0.3mH,VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance.
V1.0
2 www.tsinghuaicwx.com


Part Number TTD70N07A
Description N-Channel Trench MOSFET
Maker Unigroup
Total Page 8 Pages
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