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12N60K-MT - N-CHANNEL POWER MOSFET

General Description

The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology.

These devices are suited for high efficiency switch mode power supply.

Key Features

  • RDS(ON) ≤ 0.70Ω @ VGS=10V, ID=6.0A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness 1 TO-220F3.
  • SYMBOL.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2  FEATURES * RDS(ON) ≤ 0.70Ω @ VGS=10V, ID=6.