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2N7002T - N-CHANNEL POWER MOSFET

General Description

The UTC 2N7002T uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • High Density Cell Design for Low RDS(ON).
  • Voltage Controlled Small Signal Switch.
  • Rugged and Reliable.
  • High Saturation Current Capability.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for 2N7002T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2N7002T. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 2N7002T 300mA, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N7002T uses advanced technology to provide excellent RDS(ON), low gate cha...

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2T uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Package 2N7002TG-AN3-R SOT-523 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 SGD Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-542.

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