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2N7002T Datasheet

The 2N7002T is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part Number2N7002T
ManufacturerDiodes Incorporated
Overview and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power ma. BVDSS 60V RDS(ON) 7.5Ω @ VGS = 5V ID TA = +25°C 115mA Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* DC-DC.
Part Number2N7002T
DescriptionN-Channel MOSFET
ManufacturerMicro Commercial Components
Overview Features • Low Gate Threshold Voltage • Low Input Capacitance • Low On-Resistance • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (1) • Lead F.
* Low Gate Threshold Voltage
* Low Input Capacitance
* Low On-Resistance
* Epoxy Meets UL 94 V-0 Flammability Rating
* Moisture Sensitivity Level 1
* Halogen Free. “Green” Device (1)
* Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) 17 1&KDQQHO.
Part Number2N7002T
DescriptionN-Channel FET
Manufactureronsemi
Overview N-Channel Enhancement Mode Field Effect Transistor 2N7002T Features • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra−.
* Low On
*Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra
*Small Surface Mount Package
* This Device is Pb
*Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit D.
Part Number2N7002T
DescriptionSmall Signal MOSFET Transistor
ManufacturerGalaxy Microelectronics
Overview Production specification Small Signal MOSFET Transistor FEATURES  Low on-resistance.  Low gate threshold voltge.  Low input capacitance.  Fast switching speed.  Low input/output leakage. Pb Le.
* Low on-resistance.
* Low gate threshold voltge.
* Low input capacitance.
* Fast switching speed.
* Low input/output leakage. Pb Lead-free 2N7002T APPLICATIONS
* N-channel enhancement mode effect transistor.
* Switching application. ORDERING INFORMATION Type No. Marking 2N7002T 72 SOT-523 .

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