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3N65 - N-CHANNEL POWER MOSFET

General Description

The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) < 3.8Ω @ VGS = 10V, ID = 1.5A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for 3N65 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 3N65. For precise diagrams, tables, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 3N65 3A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better cha...

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high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 3.8Ω @ VGS = 10V, ID = 1.