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Unisonic Technologies

4N60K-MT Datasheet Preview

4N60K-MT Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
4N60K-MT
Preliminary
4.0A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N60K-MT is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) < 2.5@ VGS = 10 V, ID = 2.2 A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
Power MOSFET
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-B30.F




Unisonic Technologies

4N60K-MT Datasheet Preview

4N60K-MT Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

4N60K-MT
Preliminary
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N60KL-TA3-T
4N60KG-TA3-T
4N60KL-TF3-T
4N60KG-TF3-T
4N60KL-TF1-T
4N60KG-TF1-T
4N60KL-TF2-T
4N60KG-TF2-T
4N60KL-TF3-T
4N60KG-TF3-T
4N60KL-TM3-T
4N60KG-TM3-T
4N60KL-TMS-T
4N60KG-TMS-T
4N60KL-TMS2-T
4N60KG-TMS2-T
4N60KL-TMS4-T
4N60KG-TMS4-T
4N60KL-TN3-R
4N60KG-TN3-R
4N60KL-TND-R
4N60KG-TND-R
4N60KL-T2Q-T
4N60KG-T2Q-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
Power MOSFET
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
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Tape Reel
Tape Reel
Tube
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-B30.F


Part Number 4N60K-MT
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
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