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4N60K-MT - N-CHANNEL POWER MOSFET

Description

The UTC 4N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2 A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, high Ruggedness.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2016 Unisonic Technologies Co. , Ltd 1 of 7 QW-R502-B30.F 4N60K-MT Preliminary.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 4N60K-MT Preliminary 4.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2 A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-B30.
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