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50N06-F Datasheet - Unisonic Technologies

N-CHANNEL POWER MOSFET

50N06-F Features

* RDS(ON) ≤ 23 mΩ @ VGS=10V, ID=25A

* Fast switching capability

* 100% avalanche energy specified

* Improved dv/dt capability 1 TO-220 1 TO-251 1 TO-263 1 TO-252

* SYMBOL 2.Drain 1.Gate 3.Source

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 50N06L-TA3

50N06-F General Description

The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power applian.

50N06-F Datasheet (434.87 KB)

Preview of 50N06-F PDF

Datasheet Details

Part number:

50N06-F

Manufacturer:

Unisonic Technologies

File Size:

434.87 KB

Description:

N-channel power mosfet.

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TAGS

50N06-F N-CHANNEL POWER MOSFET Unisonic Technologies

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