Datasheet4U Logo Datasheet4U.com

50N06-F - N-CHANNEL POWER MOSFET

Description

conduction capability of about 50A, fast switching speed.

Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.

Features

  • S.
  • RDS(ON) ≤ 23 mΩ @ VGS=10V, ID=25A.
  • Fast switching capability.
  • 100% avalanche energy specified.
  • Improved dv/dt capability 1 TO-220 1 TO-251 1 TO-263 1 TO-252.
  • SYMBOL 2.Drain 1.Gate 3.Source.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 50N06-F Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.  FEATURES * RDS(ON) ≤ 23 mΩ @ VGS=10V, ID=25A * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability 1 TO-220 1 TO-251 1 TO-263 1 TO-252  SYMBOL 2.Drain 1.Gate 3.
Published: |