8N65 Key Features
- RDS(ON) < 1.4Ω@VGS = 10 V
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING INFORMATION
- Part: 8N65
- Manufacturer: Unisonic Technologies (official site)
- Size: 235.73 KB
Other 8N65 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
8N65 | N-Channel Mosfet Transistor |
| CHONGQING PINGYANG CHONGQING PINGYANG |
8N65 | N-CHANNEL MOSFET |
Unisonic Technologies |
8N65-ML | N-CHANNEL POWER MOSFET |
| CHONGQING PINGYANG CHONGQING PINGYANG |
8N65B | N-CHANNEL MOSFET |
| CHONGQING PINGYANG CHONGQING PINGYANG |
8N65F | N-CHANNEL MOSFET |
8N65 Description
The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.