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UT3414 - Power MOSFET

Description

The UT3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S.
  • RDS(ON) ≤ 50mΩ @ VGS=4.5V, ID=4.2A.
  • RDS(ON) ≤ 63mΩ @ VGS=2.5V, ID=3.7A.
  • RDS(ON) ≤ 87mΩ @ VGS=1.8V, ID=3.2A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UT3414 N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 50mΩ @ VGS=4.5V, ID=4.2A * RDS(ON) ≤ 63mΩ @ VGS=2.5V, ID=3.7A * RDS(ON) ≤ 87mΩ @ VGS=1.8V, ID=3.
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