Datasheet4U Logo Datasheet4U.com

UT3419 - Power MOSFET

General Description

The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge.

The gate voltage is as low as 2.5V.

The UTC UT3419 can be applied in PWM applications or used as a load switch.

Key Features

  • S.
  • RDS(ON) ≤ 70 mΩ @ VGS=-10V, ID=-3.5A.
  • RDS(ON) ≤ 80 mΩ @ VGS=-4.5V, ID=-3.0A.
  • RDS(ON) ≤ 130 mΩ @ VGS=-2.5V, ID=-1.0A.
  • SYMBOL Power MOSFET.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UT3415 P-CHANNEL POWER MOSFET UTC
UT3416-H N-CHANNEL MOSFET UTC
UT3418 N-Channel Power MOSFET UTC
UT3400 N-CHANNEL MOSFET UTC
UT3400-H 30V N-CHANNEL MOSFET UTC

Other Datasheets by Unisonic Technologies

Part Number Description
UT3413 Power MOSFET
UT3414 Power MOSFET
UT3416 N-CHANNEL MOSFET
UT3443 Power MOSFET
UT3458 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD UT3419 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V. The UTC UT3419 can be applied in PWM applications or used as a load switch.  FEATURES * RDS(ON) ≤ 70 mΩ @ VGS=-10V, ID=-3.5A * RDS(ON) ≤ 80 mΩ @ VGS=-4.5V, ID=-3.0A * RDS(ON) ≤ 130 mΩ @ VGS=-2.5V, ID=-1.0A  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT3419L-AE2-R UT3419G-AE2-R UT3419L-AE3-R UT3419G-AE3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 SOT-23 Pin Assignment 1 2 3 G S D G S D Packing Tape Reel Tape Reel  MARKING www.unisonic.com.