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UT3414 - Power MOSFET

General Description

The UT3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 50mΩ @ VGS=4.5V, ID=4.2A.
  • RDS(ON) ≤ 63mΩ @ VGS=2.5V, ID=3.7A.
  • RDS(ON) ≤ 87mΩ @ VGS=1.8V, ID=3.2A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT3414 N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 50mΩ @ VGS=4.5V, ID=4.2A * RDS(ON) ≤ 63mΩ @ VGS=2.5V, ID=3.7A * RDS(ON) ≤ 87mΩ @ VGS=1.8V, ID=3.