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UT3413 Datasheet Power MOSFET

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD UT3413 P-CHANNEL ENHANCEMENT MODE .

General Description

The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

 SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT3413L-AE2-R UT3413G-AE2-R SOT-23-3 UT3413L-AE3-R UT3413G-AE3-R SOT-23 Note: Pin Assignment: G: Gate S: Source D: Drain Pin Assignment 1 2 3 G S D G S D Packing Tape Reel Tape Reel  MARKING .unisonic..tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-159.G UT3413 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage VDSS -20 V VGSS ±8 V Continuous Drain Current (Note 3) ID -3 A Pulsed Drain Current (Note 1, 2) IDM -15 A Power Dissipation Junction Temperature PD 0.6 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

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