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UT3416 - N-CHANNEL MOSFET

General Description

The UTC UT3416 is advanced N-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS (ON), low gate charge and low gate voltages as low as 1.8V.When it is used as a load switch or in PWM application, the UTC UT3416 can be considered as an ideal.

FEA

Key Features

  • S.
  • RDS(ON) ≤ 22 mΩ @ VGS=4.5V, ID =6.5A RDS(ON) ≤ 26 mΩ @ VGS=2.5V, ID =5.5A RDS(ON) ≤ 40 mΩ @ VGS=1.8V, ID =5.0A.
  • SYMBOL Power MOSFET D S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT3416 6.5A, 20V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3416 is advanced N-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS (ON), low gate charge and low gate voltages as low as 1.8V.When it is used as a load switch or in PWM application, the UTC UT3416 can be considered as an ideal.  FEATURES * RDS(ON) ≤ 22 mΩ @ VGS=4.5V, ID =6.5A RDS(ON) ≤ 26 mΩ @ VGS=2.5V, ID =5.5A RDS(ON) ≤ 40 mΩ @ VGS=1.8V, ID =5.