• Part: CHA3024-99F
  • Manufacturer: United Monolithic Semiconductors
  • Size: 383.46 KB
Download CHA3024-99F Datasheet PDF
CHA3024-99F datasheet preview
CHA3024-99F page 2
Page 2
CHA3024-99F page 3
Page 3

CHA3024-99F Key Features

  • Broadband performances: 2-22GHz
  • Typical Linear Gain: 15dB
  • Up to 30 dB adjustable gain with Vg2
  • P1dB: 18dBm
  • Psat: 20dBm
  • OIP3: 30dBm
  • Typical Noise Figure: 3dB
  • DC bias: Vd=5V@Id=100mA, Vg1=-0.3V and Vg2=1.7V
  • Chip dimensions: 3.04 x 1.73 x 0.1mm
  • 27 Oct 20

Related United Monolithic Semiconductors Datasheets

Part Number Description
CHA3024-FDB Low Noise Amplifier
CHA3024-QGG 2-22GHz Low Noise Amplifier
CHA3023 1-18 GHz WIDE BAND AMPLIFIER
CHA3023-99F WIDE BAND AMPLIFIER
CHA3063 5.5-23GHz Driver Amplifier

CHA3024-99F Description

The CHA3024-99F is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22GHz. It is designed for a wide range of applications, such as electronic warfare, X and Ku Point to Point Radio, and test instrumentation. The circuit is manufactured using a 0.15µm gate length pHEMT process, with via holes through the substrate, air bridges and optical gate lithography.