CHA3218-99F Key Features
- Broadband performances: 2-18GHz
- Noise figure : 2dB
- Output power: 15dBm @ 1dBp
- Linear gain: 24dB
- High linearity: 25dBm
- Quiescent bias point: Vd=4V, Id=120mA
- Chip size 3.07x1.57x0.1mm
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec
CHA3218-99F is 2-18GHz Low Noise Amplifier manufactured by United Monolithic Semiconductors.
| Part Number | Description |
|---|---|
| CHA3023 | 1-18 GHz WIDE BAND AMPLIFIER |
| CHA3023-99F | WIDE BAND AMPLIFIER |
| CHA3024-99F | 2-22GHz Low Noise Amplifier |
| CHA3024-FDB | Low Noise Amplifier |
| CHA3024-QGG | 2-22GHz Low Noise Amplifier |
The CHA3218-99F is a two stage very wide band Low Noise Amplifier. The wide frequency band associated to a 2dB low noise figure makes this circuit very versatile for very high performance systems. It is designed for a wide range of applications, from military to mercial munication systems.