CHA3396-QDG Key Features
- Broadband performances: 27-33.5GHz
- 19dBm Pout at 1dB pression
- 22dB gain
- 30dBm OTOI
- DC bias: Vd= 4.0V, Id= 155mA
- 24L-QFN4x4 (QDG)
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE
- Part: CHA3396-QDG
- Manufacturer: United Monolithic Semiconductors
- Size: 644.83 KB
Related United Monolithic Semiconductors Datasheets
| Part Number | Description |
|---|---|
| CHA3395-98F | Medium Power Amplifier |
| CHA3395-QDG | 21-29.5GHz Medium Power Amplifier |
| CHA3397-QDG | 36-40.5GHz Medium Power Amplifier |
| CHA3398-QDG | Medium Power Amplifier |
| CHA3023 | 1-18 GHz WIDE BAND AMPLIFIER |
CHA3396-QDG Description
The CHA3396-QDG is a 3 stage monolithic Medium Power Amplifier, which produces 22dB gain for 19dBm output power. It is designed for a wide range of applications, from military to mercial munication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.