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CHA3512 Datasheet - United Monolithic Semiconductors

CHA3512, GaAs Monolithic Microwave

The CHA3512 is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The.

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Datasheet Details

Part number:

CHA3512

Manufacturer:

United Monolithic Semiconductors

File Size:

356.24 KB

Description:

GaAs Monolithic Microwave

CHA3512 Features

* Performances: 6-18GHz

* 23dBm saturated output power

* 16dB gain

* 1 bit attenuator for 20dB dynamic range

* DC power consumption: 210mA @ 4.5V

* Chip size: 4.27 x 2.46 x 0.1mm 0dB state 20dB state Typical on wafer Measurements Gain versus attenuation states Main Characte

CHA3512 Distributors

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CHA3512 GaAs Monolithic Microwave United Monolithic Semiconductors

United Monolithic Semiconductors CHA3512-like datasheet

CHA3512 Stock/Price

United Monolithic Semiconductors

CHA3512-99F/00

RF & MW VGA

Richardson RFPD

0 In Stock

Qty : 25 units

Unit Price : $289.8

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