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CHA3513 - GaAs Monolithic Microwave

Datasheet Summary

Description

The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through (SPST) switch.

It is designed for defense applications.

The backside of the chip is both RF and DC grounded.

Features

  • Performances: 6-18GHz.
  • 20dBm saturated output power.
  • 19 dB gain.
  • 3 bit attenuator for 26dB range.
  • DC power consumption, 300mA @ 4.5V.
  • Chip size: 6.68 x 2.46 x 0.1mm 0dB state 5dB state 10dB state Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 18 GHz G Small signal gain @ Attenuator state 0dB 19 dB Psat Saturated Output power @ Attenuator state 0dB 20 dBm ATT dyn Attenuator range with 3bit 25 dB.

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Datasheet Details

Part number CHA3513
Manufacturer United Monolithic Semiconductors
File Size 199.06 KB
Description GaAs Monolithic Microwave
Datasheet download datasheet CHA3513 Datasheet
Additional preview pages of the CHA3513 datasheet.

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Full PDF Text Transcription

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CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through (SPST) switch. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. RF IN The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
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