CHA3513
CHA3513 is GaAs Monolithic Microwave manufactured by United Monolithic Semiconductors.
Ro HS PLIANT
6-18GHz 3 bit Digital Variable Amplifier
Ga As Monolithic Microwave IC
Description
The CHA3513 is posed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through (SPST) switch. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process.
RF IN
The circuit is manufactured with a p HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
10A 5A 10A1 B C F G 10d B 5d B 10d B
RF OUT
10B
5B 10B1 A D E
Typical on wafer Measurements Gain versus attenuation states
Main Features
- Performances: 6-18GHz
- 20d Bm saturated output power
- 19 d B gain
- 3 bit attenuator for 26d B range
- DC power consumption, 300m A @ 4.5V
- Chip size: 6.68 x 2.46 x 0.1mm
0d B state 5d B state 10d B state
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range 6
18 GHz
G Small signal gain @ Attenuator state 0d B
19 d...
