CHA3511
CHA3511 is GaAs Monolithic Microwave manufactured by United Monolithic Semiconductors.
6-18GHz Amplifier
Ro HS PLIANT
Ga As Monolithic Microwave IC
Description
The CHA3511 is posed of a Single Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier. It is designed for defence, naval, or avionic applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process.
RF IN
E2 A B
RF OUT
The circuit is manufactured with a Power p HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
F DC
It is available in chip form.
Main Features
Wide Band: 6-18GHz 16d B gain 39d B isolation 22 d Bm saturated output power DC power consumption, 190m A @ 4.5V Chip size: 3.55 x 2.30 x 0.1mm
Main Characteristics d BS21 (d B)
Typical on wafer Measurements Gain versus switch states
30 20 10
0 -10 -20 -30 -40 -50 -60
2 4 6 8 10 12 14 16 18 20 Frequency GHz
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G Small signal gain @ Switch on
ISO Delta Gain (1)
Psat Saturated Output power @Switch on
Min Typ Max Unit 6 18 GHz
15 16 d B
35 39 d B
20 22 d Bm
ESD Protection: Electrostatic discharge sensitive device. Observe handling...
