Datasheet4U Logo Datasheet4U.com

CHA3511 - GaAs Monolithic Microwave

Datasheet Summary

Description

The CHA3511 is composed of a Single Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier.

It is designed for defence, naval, or avionic applications.

The backside of the chip is both RF and DC grounded.

Features

  • Wide Band: 6-18GHz 16dB gain 39dB isolation 22 dBm saturated output power DC power consumption, 190mA @ 4.5V Chip size: 3.55 x 2.30 x 0.1mm Main Characteristics dBS21 (dB) Typical on wafer Measurements Gain versus switch states 30 20 10 0 -10 -20 -30 -40 -50 -60 2 4 6 8 10 12 14 16 18 20 Frequency GHz Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Small signal gain @ Switch on ISO Delta Gain (1) Psat Saturated Output power @Switch on Min Typ Max Unit 6 18 GHz 15 16 dB.

📥 Download Datasheet

Datasheet preview – CHA3511

Datasheet Details

Part number CHA3511
Manufacturer United Monolithic Semiconductors
File Size 266.76 KB
Description GaAs Monolithic Microwave
Datasheet download datasheet CHA3511 Datasheet
Additional preview pages of the CHA3511 datasheet.

📁 Similar Datasheet

  • CHA3080-98F - 71 ~ 76 GHz Medium Power Amplifier (UMS)
  • CHA-20NF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA02016 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)
  • CHA0402 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)
  • CHA441 - Hall-effect sensor (Cosemitech)
Other Datasheets by United Monolithic Semiconductors

Full PDF Text Transcription

Click to expand full text
6-18GHz Amplifier CHA3511 RoHS COMPLIANT GaAs Monolithic Microwave IC Description The CHA3511 is composed of a Single Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier. It is designed for defence, naval, or avionic applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. RF IN E2 A B RF OUT The circuit is manufactured with a Power pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. F DC It is available in chip form. Main Features Wide Band: 6-18GHz 16dB gain 39dB isolation 22 dBm saturated output power DC power consumption, 190mA @ 4.5V Chip size: 3.55 x 2.30 x 0.
Published: |