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CHA3511 Datasheet Gaas Monolithic Microwave

Manufacturer: United Monolithic Semiconductors

Overview: 6-18GHz Amplifier CHA3511 RoHS PLIANT GaAs Monolithic Microwave.

General Description

The CHA3511 is posed of a Single Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier.

It is designed for defence, naval, or avionic applications.

The backside of the chip is both RF and DC grounded.

Key Features

  • Wide Band: 6-18GHz 16dB gain 39dB isolation 22 dBm saturated output power DC power consumption, 190mA @ 4.5V Chip size: 3.55 x 2.30 x 0.1mm Main Characteristics dBS21 (dB) Typical on wafer Measurements Gain versus switch states 30 20 10 0 -10 -20 -30 -40 -50 -60 2 4 6 8 10 12 14 16 18 20 Frequency GHz Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Small signal gain @ Switch on ISO Delta Gain (1) Psat Saturated Output power @Switch on Min Typ Max Unit 6 18 GHz 15 16 dB.

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CHA3511 Distributor