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CHA3514 - GaAs Monolithic Microwave

Datasheet Summary

Description

The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator.

It is designed for defense applications.

The backside of the chip is both RF and DC grounded.

Features

  • Performances: 6-18GHz.
  • 19dBm saturated output power.
  • 13 dB gain.
  • 4bit attenuator for 39.5dB dynamic range.
  • DC power consumption, 190mA @ 4.5V.
  • Chip size: 5.54 x 2.30 x 0.1mm Typical on wafer Measurements Gain versus attenuation states Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 18 GHz G Small signal gain @ Attenuator state 0dB 13 dB Psat Saturated Output power @ Attenuator state 0dB 19 dBm ATT dy.

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Datasheet preview – CHA3514

Datasheet Details

Part number CHA3514
Manufacturer United Monolithic Semiconductors
File Size 260.77 KB
Description GaAs Monolithic Microwave
Datasheet download datasheet CHA3514 Datasheet
Additional preview pages of the CHA3514 datasheet.

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Full PDF Text Transcription

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CHA3514 RoHS COMPLIANT 6-18GHz 4 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ Performances: 6-18GHz ■ 19dBm saturated output power ■ 13 dB gain ■ 4bit attenuator for 39.5dB dynamic range ■ DC power consumption, 190mA @ 4.5V ■ Chip size: 5.54 x 2.30 x 0.
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