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CHA3512

Manufacturer: United Monolithic Semiconductors

CHA3512 datasheet by United Monolithic Semiconductors.

CHA3512 datasheet preview

CHA3512 Datasheet Details

Part number CHA3512
Datasheet CHA3512-UnitedMonolithicSemiconductors.pdf
File Size 356.24 KB
Manufacturer United Monolithic Semiconductors
Description GaAs Monolithic Microwave
CHA3512 page 2 CHA3512 page 3

CHA3512 Overview

The CHA3512 is posed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed for defense applications. The backside of the chip is both RF and DC grounded.

CHA3512 Key Features

  • Performances: 6-18GHz
  • 23dBm saturated output power
  • 16dB gain
  • 1 bit attenuator for 20dB dynamic range
  • DC power consumption: 210mA @ 4.5V
  • Chip size: 4.27 x 2.46 x 0.1mm
  • 23 May 08
  • B.P.46
  • 91401 Orsay Cedex France
  • Fax : +33 (0)1 69 33 03 09
United Monolithic Semiconductors logo - Manufacturer

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CHA3512 Distributor

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