CHA3512
CHA3512 is GaAs Monolithic Microwave manufactured by United Monolithic Semiconductors.
Ro HS PLIANT
6-18GHz Low Noise Digital Variable Amplifier
Ga As Monolithic Microwave IC
Description
The CHA3512 is posed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process.
The circuit is manufactured with a p HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
Main Features
- Performances: 6-18GHz
- 23d Bm saturated output power
- 16d B gain
- 1 bit attenuator for 20d B dynamic range
- DC power consumption: 210m A @ 4.5V
- Chip size: 4.27 x 2.46 x 0.1mm
0d B state
20d B state
Typical on wafer Measurements Gain versus attenuation states
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range 6
18 GHz
G Small signal gain @ Attenuator state 0d B
16 d B
Psat
Saturated Output power @ Attenuator state 0d B
23 d Bm
ATT...
