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CHA3512 Datasheet Gaas Monolithic Microwave

Manufacturer: United Monolithic Semiconductors

Overview: CHA3512 RoHS PLIANT 6-18GHz Low Noise Digital Variable Amplifier GaAs Monolithic Microwave.

General Description

The CHA3512 is posed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier.

It is designed for defense applications.

The backside of the chip is both RF and DC grounded.

Key Features

  • Performances: 6-18GHz.
  • 23dBm saturated output power.
  • 16dB gain.
  • 1 bit attenuator for 20dB dynamic range.
  • DC power consumption: 210mA @ 4.5V.
  • Chip size: 4.27 x 2.46 x 0.1mm 0dB state 20dB state Typical on wafer Measurements Gain versus attenuation states Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 18 GHz G Small signal gain @ Attenuator state 0dB 16 dB Psat Saturated Output power @ Attenuator state 0.

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CHA3512 Distributor