CHA3656-QAG Key Features
- Broadband performances: 5.8- 17GHz
- 1.7dB noise figure
- 24dBm 3rd order intercept point
- 14dBm power at 1dB pression
- 20dB gain
- Low DC power consumption
- 16L-QFN3X3 SMD package
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec
- Part: CHA3656-QAG
- Manufacturer: United Monolithic Semiconductors
- Size: 791.30 KB
Related United Monolithic Semiconductors Datasheets
| Part Number | Description |
|---|---|
| CHA3656-FAB | Low Noise Amplifier |
| CHA3660-QQG | 21-27.5GHz Medium Power Amplifier |
| CHA3664-QAG | 5-21GHz Driver Amplifier |
| CHA3665-QAG | 5-21GHz Driver Amplifier |
| CHA3666 | GaAs Monolithic Microwave |
CHA3656-QAG Description
The CHA3656-QAG is a two-stage selfbiased wide band monolithic low noise amplifier. It is designed for a wide range of applications, from military to mercial munication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.