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CHA3660-QQG Datasheet 21-27.5ghz Medium Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA3660-QQG 21-27.5GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless.

General Description

The CHA3660-QQG is a 3 stage monolithic medium power amplifier, which produces 25dB gain for 19dBm output power.

It is designed for a wide range of applications, from military to mercial munication systems.

The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  • Broadband performances: 21-27.5GHz.
  • 19dBm Pout at 1dB compression.
  • 25dB gain.
  • 30dBm OTOI.
  • DC bias: Vd= 4.0V, Id= 180mA.
  • 16L-QFN4x4 (QQG).
  • MSL1 Output power (dBm), PAE (%) Output Power & PAE versus Frequency 30 28 26 24 22 20 18 16 14 Psat P-1dB PAE sat 12 10 17 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) 28 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range.

CHA3660-QQG Distributor