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CHA3667aQDG - 7-20GHz Medium Power Amplifier

Datasheet Summary

Description

The CHA3667aQDG is a wide band monolithic medium power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The circuit is manufactured with a PowerpHEMT process, 0.15µm gate length, via hole through the substrate.

Features

  • Broadband performance 7-20GHz.
  • Self-biased.
  • 23dB gain @ 2.7dB noise figure.
  • 20dBm Output power @1dBcp.
  • DC power consumption, 175mA @ 4.2V.
  • 24L-QFN4X4 SMD package.
  • MSL1 UMS A3667A YYWW RFin Vd RFout Main Characteristics Tamb = +25°C, Vd= 4.2V Symbol Parameter Min Typ Max Fop Input frequency range 7 20 G Small signal gain 21 23 NF Noise Figure 2.7 3.5 P-1dB Output power at 1dB gain compression 18.5 20 Id Bias current 130 175 220 ESD Prote.

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Datasheet Details

Part number CHA3667aQDG
Manufacturer United Monolithic Semiconductors
File Size 348.05 KB
Description 7-20GHz Medium Power Amplifier
Datasheet download datasheet CHA3667aQDG Datasheet
Additional preview pages of the CHA3667aQDG datasheet.

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Full PDF Text Transcription

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CHA3667aQDG RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PowerpHEMT process, 0.15µm gate length, via hole through the substrate. It is ESD protected on RF ports thanks to DC specific filter circuits. It is available in lead-free SMD package. Main Features ■ Broadband performance 7-20GHz ■ Self-biased ■ 23dB gain @ 2.7dB noise figure ■ 20dBm Output power @1dBcp ■ DC power consumption, 175mA @ 4.2V ■ 24L-QFN4X4 SMD package ■ MSL1 UMS A3667A YYWW RFin Vd RFout Main Characteristics Tamb = +25°C, Vd= 4.
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