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CHA3667A - 7-20GHz Medium Power Amplifier

Datasheet Summary

Description

The CHA3667a is a wide band monolithic medium power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The circuit is manufactured with a Power pHEMT process, 0.15µm gate length, via hole through the substrate.

Features

  • Broadband performance 7-20GHz.
  • Self biased.
  • 23dB gain @ 2.7dB noise figure.
  • 20 dBm Output power at 1dB compression.
  • DC power consumption, 175mA @ 4.2V.
  • Chip size : 2,45 x 1,21 x 0,1mm Gain & Return Losses (dB) RFin RFout On wafer typical measurements 30 S21 25 20 15 10 5 0 -5 -10 S11 -15 S22 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency ( GHz) Main Characteristics Tamb = +25°C Symbol Parameter Min Typ Max Unit Fop Input frequency range 7 20 G.

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Datasheet Details

Part number CHA3667A
Manufacturer United Monolithic Semiconductors
File Size 150.66 KB
Description 7-20GHz Medium Power Amplifier
Datasheet download datasheet CHA3667A Datasheet
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Full PDF Text Transcription

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CHA3667a RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Vd The CHA3667a is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a Power pHEMT process, 0.15µm gate length, via hole through the substrate. It is ESD protected on RF ports thanks to DC specific filter circuits. It is supplied in chip form. Main Features ■ Broadband performance 7-20GHz ■ Self biased ■ 23dB gain @ 2.7dB noise figure ■ 20 dBm Output power at 1dB compression ■ DC power consumption, 175mA @ 4.
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