CHA3666-FAB Description
The CHA3666-FAB is a two-stage self-biased wide band monolithic Low Noise Amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
CHA3666-FAB Key Features
- Broadband performance 6-16GHz
- 1.8dB typical Noise Figure
- 24dBm 3rd order intercept point
- 16dBm power at 1dB pression
- 21dB gain
- Low DC power consumption
- 6x6mm² metal ceramic hermetic package
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec