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CHA3666-FAB - Low Noise Amplifier

Datasheet Summary

Description

The CHA3666-FAB is a two-stage self-biased wide band monolithic Low Noise Amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Features

  • Broadband performance 6-16GHz.
  • 1.8dB typical Noise Figure.
  • 24dBm 3rd order intercept point.
  • 16dBm power at 1dB compression.
  • 21dB gain.
  • Low DC power consumption.
  • 6x6mm² metal ceramic hermetic package Linear Gain (dB) 30 25 20 15 10 +25 C +85 C -40 C 5 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 16 GHz NF Noise figur.

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Datasheet Details

Part number CHA3666-FAB
Manufacturer United Monolithic Semiconductors
File Size 894.76 KB
Description Low Noise Amplifier
Datasheet download datasheet CHA3666-FAB Datasheet
Additional preview pages of the CHA3666-FAB datasheet.

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Full PDF Text Transcription

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CHA3666-FAB 6-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3666-FAB is a two-stage self-biased wide band monolithic Low Noise Amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is proposed in leadless surface mount hermetic metal ceramic 6x6mm² package. The overall power supply is of 4V/80mA. The circuit is dedicated to space applications and also well suited for a wide range of microwave and millimetre wave applications and systems. UMS A3666 YYWW ## SSS Main Features ■ Broadband performance 6-16GHz ■ 1.
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