CHA3666-FAB
CHA3666-FAB is Low Noise Amplifier manufactured by United Monolithic Semiconductors.
6-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
The CHA3666-FAB is a two-stage self-biased wide band monolithic Low Noise Amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is proposed in leadless surface mount hermetic metal ceramic 6x6mm² package. The overall power supply is of 4V/80mA. The circuit is dedicated to space applications and also well suited for a wide range of microwave and millimetre wave applications and systems.
UMS A3666 YYWW ## SSS
Main Features
- Broadband performance 6-16GHz
- 1.8dB typical Noise...
