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CHA3666-FAB Datasheet Low Noise Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA3666-FAB 6-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD.

General Description

The CHA3666-FAB is a two-stage self-biased wide band monolithic Low Noise Amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is proposed in leadless surface mount hermetic metal ceramic 6x6mm² package.

Key Features

  • Broadband performance 6-16GHz.
  • 1.8dB typical Noise Figure.
  • 24dBm 3rd order intercept point.
  • 16dBm power at 1dB compression.
  • 21dB gain.
  • Low DC power consumption.
  • 6x6mm² metal ceramic hermetic package Linear Gain (dB) 30 25 20 15 10 +25 C +85 C -40 C 5 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 16 GHz NF Noise figur.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA3666-FAA 6-16GHz Low Noise Amplifier
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CHA3656-FAB Low Noise Amplifier
CHA3656-QAG 5.8-17GHz Low Noise Amplifier

CHA3666-FAB Distributor