CHA3666 - GaAs Monolithic Microwave

United Monolithic Semiconductors

Datasheet Details

Part number	CHA3666
Manufacturer	United Monolithic Semiconductors
File Size	167.20 KB
Description	GaAs Monolithic Microwave
Datasheet	CHA3666-UnitedMonolithicSemiconductors.pdf

The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier.

24,0.
Broadband performance 6-17GHz.
1.8dB noise figure.
26dBm 3rd order intercept point.
17dBm power at 1dB compression.
21dB gain 22,0 20,0 18,0 16,0 14,0 12,0 10,0.
Low DC power consumption 8,0 6,0 4,0 2,0 0,0 Main Characteristics 4,00 Temp = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND Gain 6,00 8,00 NF 10,00 12,00 14,00 16,00 18,00 Symbol Parameter NF Noise figure G Gain IP3 3rd order intercept point Min Typ Max Unit 1.8 2 dB 19 21 dB 26 dBm ESD.

📁 CHA3666 Similar Datasheet

Other Datasheets by United Monolithic Semiconductors

Published: Mar 4, 2016 |