CHA3667A Key Features
- Broadband performance 7-20GHz
- Self biased
- 23dB gain @ 2.7dB noise figure
- 20 dBm Output power at 1dB pression
- DC power consumption, 175mA @ 4.2V
- Chip size : 2,45 x 1,21 x 0,1mm
- 10 S11 -15 S22
- 20 -25 -30
- 07 Jun 10
- B.P.46
- Part: CHA3667A
- Manufacturer: United Monolithic Semiconductors
- Size: 150.66 KB
Related United Monolithic Semiconductors Datasheets
| Part Number | Description |
|---|---|
| CHA3667aQDG | 7-20GHz Medium Power Amplifier |
| CHA3660-QQG | 21-27.5GHz Medium Power Amplifier |
| CHA3664-QAG | 5-21GHz Driver Amplifier |
| CHA3665-QAG | 5-21GHz Driver Amplifier |
| CHA3666 | GaAs Monolithic Microwave |
CHA3667A Description
Vd The CHA3667a is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to mercial munication systems. The circuit is manufactured with a Power pHEMT process, 0.15µm gate length, via hole through the substrate.