Datasheet Details
| Part number | CHA3667aQDG |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 348.05 KB |
| Description | 7-20GHz Medium Power Amplifier |
| Datasheet |
 CHA3667aQDG Datasheet
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General Description
The CHA3667aQDG is a wide band monolithic medium power amplifier.
It is designed for a wide range of applications, from military to commercial communication systems.
The circuit is manufactured with a PowerpHEMT process, 0.15µm gate length, via hole through the substrate.
Key Features
- Broadband performance 7-20GHz.
- Self-biased.
- 23dB gain @ 2.7dB noise figure.
- 20dBm Output power @1dBcp.
- DC power consumption, 175mA @ 4.2V.
- 24L-QFN4X4 SMD package.
- MSL1 UMS A3667A YYWW RFin Vd RFout Main Characteristics Tamb = +25°C, Vd= 4.2V Symbol Parameter Min Typ Max Fop Input frequency range 7 20 G Small signal gain 21 23 NF Noise Figure 2.7 3.5 P-1dB Output power at 1dB gain compression 18.5 20 Id Bias current 130 175 220 ESD Prote.