CHA3801-QDG Key Features
- L-Band performances: 1-2GHz
- 1.5dB Noise Figure
- 28dB Linear Gain
- 17dBm Saturated Power
- 27dBm Output Third Order Intercept
- DC bias: Vd = 5Volt @ 70mA
- 24L-QFN4x4
- +25°C ―
- +85°C Typical Noise Figure versus Temperature
- 27 Oct 20
- Part: CHA3801-QDG
- Manufacturer: United Monolithic Semiconductors
- Size: 688.79 KB
Related United Monolithic Semiconductors Datasheets
| Part Number | Description |
|---|---|
| CHA3801-99F | L-Band Low Noise Amplifier |
| CHA3801-FAB | L-Band Low Noise Amplifier |
| CHA3023 | 1-18 GHz WIDE BAND AMPLIFIER |
| CHA3023-99F | WIDE BAND AMPLIFIER |
| CHA3024-99F | 2-22GHz Low Noise Amplifier |
CHA3801-QDG Description
The CHA3801-QDG is an L-Band LNA monolithic circuit including an active bias network. Furthermore a protection network is included in order to allow high input power survivability. It is designed for a wide range of applications, from military to mercial munication systems.