Datasheet4U Logo Datasheet4U.com

CHA5266-99F - 10-16 GHz Medium Power Amplifier

General Description

The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3.

It is designed for a wide range of applications, from military to commercial communication systems.

Key Features

  • Broadband performances: 10-16GHz.
  • 23dB Linear Gain.
  • 26.5dBm output power @ 1dB comp.
  • 36dBm OIP3.
  • DC bias: Vd=5.0Volt@Id=360mA.
  • Chip size 1.81x1.37x0.1mm. Gain and retun losses (dB) RF IN VD1 VD2 VD3 RF OUT VG1 VG2 VG3 30 25 20 S21 15 S11 10 S22 5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OIP3 O.

📥 Download Datasheet

Datasheet Details

Part number CHA5266-99F
Manufacturer United Monolithic Semiconductors
File Size 330.03 KB
Description 10-16 GHz Medium Power Amplifier
Datasheet download datasheet CHA5266-99F Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CHA-20NF (CHA-20xx) Coaxial Attenuators Component General
CHA-20NM (CHA-20xx) Coaxial Attenuators Component General
CHA-20NMF (CHA-20xx) Coaxial Attenuators Component General
CHA-20SF (CHA-20xx) Coaxial Attenuators Component General
CHA-20SM (CHA-20xx) Coaxial Attenuators Component General

Other Datasheets by United Monolithic Semiconductors

Part Number Description
CHA5266-FAB Medium Power Amplifier
CHA5266-QDG 10-16 GHz Medium Power Amplifier
CHA5215A 5.8GHz Medium Power Amplifier
CHA5250-QDG 5.5-9GHz Medium Power Amplifier
CHA5290 17.7-24GHz Medium Power Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CHA5266-99F 10-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ Broadband performances: 10-16GHz. ■ 23dB Linear Gain. ■ 26.5dBm output power @ 1dB comp. ■ 36dBm OIP3. ■ DC bias: Vd=5.0Volt@Id=360mA. ■ Chip size 1.81x1.37x0.1mm.