CHA5266-QDG Key Features
- Broadband performances: 10-16GHz
- 23dB Linear Gain
- 25.5dBm output power @ 1dB p
- 35dBm output IP3
- DC bias: Vd=5.0Volt@Id=320mA
- 24L-QFN4x4
- 20 Jan 21
- Parc Mosaic
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE
- Part: CHA5266-QDG
- Manufacturer: United Monolithic Semiconductors
- Size: 249.15 KB
Related United Monolithic Semiconductors Datasheets
| Part Number | Description |
|---|---|
| CHA5266-99F | 10-16 GHz Medium Power Amplifier |
| CHA5266-FAB | Medium Power Amplifier |
| CHA5215A | 5.8GHz Medium Power Amplifier |
| CHA5250-QDG | 5.5-9GHz Medium Power Amplifier |
| CHA5290 | 17.7-24GHz Medium Power Amplifier |
CHA5266-QDG Description
The CHA5266-QDG is a three stage monolithic GaAs medium power amplifier. It is designed for a wide range of applications, from professional to mercial munication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.