CHA5659-98F Key Features
- Broadband performances: 36-43.5GHz
- 31dBm saturated power
- 38dBm OIP3
- 22dB gain
- Gain control up to 15dB
- DC bias: Vd = 6.0Volt @ Idq = 0.8A
- Chip size 3.60x3.00x0.07mm
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec
- Part: CHA5659-98F
- Manufacturer: United Monolithic Semiconductors
- Size: 911.67 KB
Related United Monolithic Semiconductors Datasheets
| Part Number | Description |
|---|---|
| CHA5659-QXG | Power Amplifier |
| CHA5010B | X Band Driver Amplifier |
| CHA5012 | X Band Driver Amplifier |
| CHA5014-99F | X Band HBT Driver Amplifier |
| CHA5042 | 13-16GHz High Power Amplifier |
CHA5659-98F Description
The CHA5659-98F is a four stage monolithic GaAs High Power Amplifier producing 1.3 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD protections are included.