Datasheet4U Logo Datasheet4U.com

CHA5659-QXG

Power Amplifier

CHA5659-QXG Features

* Broadband performances: 40-43.5GHz

* 30dBm saturated power

* 38.5dBm OIP3

* 20dB gain

* DC bias: Vd = 6.0Volt @ Idq = 0.8A

* QFN5x6

* MSL3 Output power vs frequency Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gai

CHA5659-QXG General Description

The CHA5659-QXG is a four stage monolithic GaAs high power amplifier producing 1 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD protections are included. It is designed for Point To Point Radio or K-band SatCom applications. The CHA5659-QXG is.

CHA5659-QXG Datasheet (920.03 KB)

Preview of CHA5659-QXG PDF

Datasheet Details

Part number:

CHA5659-QXG

Manufacturer:

United Monolithic Semiconductors

File Size:

920.03 KB

Description:

Power amplifier.

📁 Related Datasheet

CHA5659-98F Power Amplifier (United Monolithic Semiconductors)

CHA5010B X Band Driver Amplifier (United Monolithic Semiconductors)

CHA5012 X Band Driver Amplifier (United Monolithic Semiconductors)

CHA5014-99F X Band HBT Driver Amplifier (United Monolithic Semiconductors)

CHA5042 13-16GHz High Power Amplifier (United Monolithic Semiconductors)

CHA5050-99F 17-26GHz Medium Power Amplifier (United Monolithic Semiconductors)

CHA5050-QDG 17-24GHz Medium Power Amplifier (United Monolithic Semiconductors)

CHA5093 22-26GHz High Power Amplifier (United Monolithic Semiconductors)

CHA5093TCF 24-26GHz High Power Amplifier (United Monolithic Semiconductors)

CHA5115-99F X-band Medium Power Amplifier (United Monolithic Semiconductors)

TAGS

CHA5659-QXG Power Amplifier United Monolithic Semiconductors

Image Gallery

CHA5659-QXG Datasheet Preview Page 2 CHA5659-QXG Datasheet Preview Page 3

CHA5659-QXG Distributor