CHA6005-99F Key Features
- High power : 32.5dBm
- High PAE : 38%
- Frequency band : 8-12GHz
- Linear gain : 22dB
- DC bias: Vd=8Volt@Id=350mA
- Chip size 3.0x1.5x0.1mm
- 25 Mar 21
- Parc Mosaic
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE
- Part: CHA6005-99F
- Manufacturer: United Monolithic Semiconductors
- Size: 235.67 KB
Related United Monolithic Semiconductors Datasheets
| Part Number | Description |
|---|---|
| CHA6005-QEG | High Power Amplifier |
| CHA6015-99F | 2-8GHz High Power Amplifier |
| CHA6042 | 13-16GHz High Power Amplifier |
| CHA6105 | 8-12GHz Driver Amplifier |
| CHA6105-99F | Driver Amplifier |
CHA6005-99F Description
The CHA6005-99F is a High Power Amplifier monolithic circuit, which integrates two stages and produces 32.5dBm output power associated to a high power added efficiency of 38%. It is designed for a wide range of applications, from defense to mercial munication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.