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CHA6015-99F - 2-8GHz High Power Amplifier

General Description

The CHA6015-99F is a HPA that provides typically 37.5dBm output power on the frequency band 2-8GHz.

The circuit is dedicated to defence applications and also well suited for a wide range of microwave applications and systems.

Key Features

  • Broadband performances: 2-8GHz.
  • Linear Gain: 18.5dB.
  • Pout at 3dB compression : 37.5dBm.
  • PAE at 3dB compression : 29%.
  • DC bias: Vd=7Volt@Id=2A.
  • Chip size: 4.68x6.53x0.07mm Main Electrical Characteristics Tamb. = +25°C, Vd = 7V, Id (Quiescent) = 2A, CW Symbol Parameter Min Freq Frequency range 2 Gain Linear Gain P3dB Output Power @3dB gain compression PAE3dB Power Added Efficiency @ 3dB gain compression Typ 18.5 37.5 29 Max Unit 8 GHz dB dBm % Ref. : DSC.

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Datasheet Details

Part number CHA6015-99F
Manufacturer United Monolithic Semiconductors
File Size 1.05 MB
Description 2-8GHz High Power Amplifier
Datasheet download datasheet CHA6015-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA6015-99F 2-8GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6015-99F is a HPA that provides typically 37.5dBm output power on the frequency band 2-8GHz. The circuit is dedicated to defence applications and also well suited for a wide range of microwave applications and systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ Broadband performances: 2-8GHz ■ Linear Gain: 18.5dB ■ Pout at 3dB compression : 37.5dBm ■ PAE at 3dB compression : 29% ■ DC bias: Vd=7Volt@Id=2A ■ Chip size: 4.68x6.53x0.07mm Main Electrical Characteristics Tamb.