UJ4C075018K3S fet equivalent, sic fet.
S (3)
w On-resistance RDS(on): 18mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 102nC w Low body diode VFSD: 1.14V w Low gate charge:.
w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction .
The UJ4C075018K3S is a 750V, 18mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characte.
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