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UJ4C075018K3S Datasheet - UnitedSiC

SiC Cascode JFET

UJ4C075018K3S Features

* S (3) w On-resistance RDS(on): 18mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 102nC w Low body diode VFSD: 1.14V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected, HBM class

UJ4C075018K3S General Description

The UJ4C075018K3S is a 750V, 18mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to.

UJ4C075018K3S Datasheet (761.66 KB)

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Datasheet Details

Part number:

UJ4C075018K3S

Manufacturer:

UnitedSiC

File Size:

761.66 KB

Description:

Sic cascode jfet.
DATASHEET UJ4C075018K3S CASE CASE D (2) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-3L, 750 V, 18 mohm Rev. B, January 202.

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UJ4C075018K3S SiC Cascode JFET UnitedSiC

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