MIE-814A2 diode equivalent, algaas/gaas t-1 3/4 package infrared emitting diode.
l l l l
2.00(.079)
0.50 (.020)
28 typ (1.102)
High radiant power and high radiant intesity Suitable for DC and high pulse current operation Peak wavelength λP =940 nm.
The MIE-814A2 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package.
6.70±0.20 (.264±.008) φ 5.00±0.20 (.197±.008)
MIE-814A2
Package Dimensions
Unit: mm ( inches )
1.30 .
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