• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Compliant to RoHS directive 2002/95/EC
TO-252
D
GDS Top View
G
S N-Channel MOSFET
.