5N50 Datasheet | Specifications & PDF Download

N-Channel MOSFET Applications: • Uninterruptible Power Supply(UPS) • LCD Panel Power • SMPS Power • DC-AC Inverter FSW25N50 • RoHS Compliant • Low O

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Shanghai Jin-ec Electronic&Technology Co., Ltd N N-CHANNEL MOSFET JHW5N50 Package MAIN CHARACTERISTICS ID 5 A VDSS 500 V Rdson（@Vgs=10V） 1.

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MDF5N50 N-channel MOSFET 500V MDF5N50 N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description The MDF5N50 uses advanced MagnaChip’s MOSFET Technology

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GENERAL DESCRIPTION GPT05N50 POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced

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N-Channel MOSFET Applications: • Uninterruptible Power Supply(UPS) • LCD Panel Power • SMPS Power • DC-AC Inverter FSW25N50 • RoHS Compliant • Low O

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast re

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast re

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ITP15N50A ITA15N50A N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power

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www.DataSheet4U.com HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet VDSS IXFE 55N50 IXFE 50N50 ID25 RDS(on) 80 mΩ 100 mΩ 500 V 5

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP15N50

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FQPF5N50CF 500V N-Channel MOSFET FRFET FQPF5N50CF 500V N-Channel MOSFET Features • 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V • Low gate charge ( typical

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AP05N50H-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼

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CMD5N50/CMU5N50 General Description These N-Channel enhancement mode power field effect transistors are produced using advanced technology which has

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Shanghai Jin-ec Electronic&Technology Co., Ltd N N-CHANNEL MOSFET JHW5N50 Package MAIN CHARACTERISTICS ID 5 A VDSS 500 V Rdson（@Vgs=10V） 1.

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Shanghai Jin-ec Electronic&Technology Co., Ltd N N-CHANNEL MOSFET JHW5N50 Package MAIN CHARACTERISTICS ID 5 A VDSS 500 V Rdson（@Vgs=10V） 1.

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UNISONIC TECHNOLOGIES CO., LTD 15N50K-MT 15A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N50K-MT is an N-channel mode power MOSFET using UTC’

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N R N-CHANNEL MOSFET JCS5N50C MAIN CHARACTERISTICS Package ID VDSS Rdson（Vgs=10V） Qg 5A 500 V 1.45Ω 14nC z z z UPS APPLICATIONS z High fr

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N R N-CHANNEL MOSFET JCS5N50C MAIN CHARACTERISTICS Package ID VDSS Rdson（Vgs=10V） Qg 5A 500 V 1.45Ω 14nC z z z UPS APPLICATIONS z High fr

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H5N5015P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching • Low gate ch

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