5N50 Datasheet | Specifications & PDF Download

N-Channel MOSFET Applications: • Uninterruptible Power Supply(UPS) • LCD Panel Power • SMPS Power • DC-AC Inverter FSW25N50 • RoHS Compliant • Low O

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current: ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% aval

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ITP15N50A ITA15N50A N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 1.4Ω@VGS=10V ·Fully characterized avalanche voltage and curre

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TF5N50-VB TF5N50-VB Datasheet /$IBOOFM
7
%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC)

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FQD5N50C / FQU5N50C October 2008 QFET ® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field

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N-Channel MOSFET Applications: • Uninterruptible Power Supply(UPS) • LCD Panel Power • SMPS Power • DC-AC Inverter FSW25N50 • RoHS Compliant • Low O

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MOT5N50C/MOT5N50D N-CHANNEL MOSFET „ MOT5N50C/D PRODUCT CHARACTERISTICS Symbol VDSS RDS(on)typ(@VGS =10 V) Qg@type 500V 1.2Ω 24nC 2.Drain ID 5A

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MOT5N50C/MOT5N50D N-CHANNEL MOSFET „ MOT5N50C/D PRODUCT CHARACTERISTICS Symbol VDSS RDS(on)typ(@VGS =10 V) Qg@type 500V 1.2Ω 24nC 2.Drain ID 5A

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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www.DataSheet4U.com Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTA 5N50P IXTP 5N50P IXTY 5N50P VDSS = 500 V

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MDF5N50 N-channel MOSFET 500V MDF5N50 N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description The MDF5N50 uses advanced MagnaChip’s MOSFET Technology

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N R N-CHANNEL MOSFET JCS5N50C MAIN CHARACTERISTICS Package ID VDSS Rdson（Vgs=10V） Qg 5A 500 V 1.45Ω 14nC z z z UPS APPLICATIONS z High fr

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HiPerRFTM IXFN 55N50F Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, L

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV25N50E/D Advance Information TMOS E-FET.™ Power Field Effect Transistor D3PAK for

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N R N-CHANNEL MOSFET JCS5N50VT/RT/CT/FT MAIN CHARACTERISTICS Package ID 5 A VDSS 500 V Rdson（@Vgs=10V） 1.6Ω Qg 15 nC z z z UPS APPLICA

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Linear L2TM Power MOSFETs w/ Extended FBSOA IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 VDSS = ID25 = ≤ RDS(on) 500V 15A 480mΩ N-Channel Enhancement Mode

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Silicon N-Channel Power MOSFET ○R CS5N50F A9R General Description： CS5N50F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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PFP830E / PFF5N50E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkab

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