VSM50N15 mosfet equivalent, mosfet.
* VDS =150V,ID =50A RDS(ON) <23mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stab.
General Features
* VDS =150V,ID =50A RDS(ON) <23mΩ @ VGS=10V
* High density cell design for ultra low Rdson
Image gallery
Download