VSEEI Datasheet | Specifications & PDF Download

BTB12-800BW/BTA312-800B/BTA212-800E Shenzhen VSEEI Semiconductor Co., Ltd DESCRIPTION: With high ability to withstand the shock loading of large curr

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BTB12-800BW/BTA312-800B/BTA212-800E Shenzhen VSEEI Semiconductor Co., Ltd DESCRIPTION: With high ability to withstand the shock loading of large curr

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BTB12-800BW/BTA312-800B/BTA212-800E Shenzhen VSEEI Semiconductor Co., Ltd DESCRIPTION: With high ability to withstand the shock loading of large curr

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BTB16-600BW/BTA316-600B/BTA316-600B0 Shenzhen VSEEI Semiconductor Co., Ltd DESCRIPTION: With high ability to withstand the shock loading of large cur

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BTB16-600BW/BTA316-600B/BTA316-600B0 Shenzhen VSEEI Semiconductor Co., Ltd DESCRIPTION: With high ability to withstand the shock loading of large cur

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BTB16-600BW/BTA316-600B/BTA316-600B0 Shenzhen VSEEI Semiconductor Co., Ltd DESCRIPTION: With high ability to withstand the shock loading of large cur

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2SD1899-Z-T1 Shenzhen VSEEI Semiconductor Co., Ltd 2SD1899-Z TRANSISTOR (NPN) FEATURES  High hFE  Low VCE(sat) MAXIMUM RATINGS (Ta=25℃ unless oth

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Description The VST12N100 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Description TheVSM50N15uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety

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VSM120N04-SS Shenzhen VSEEI Semiconductor Co., Ltd Description These N-Channel enhancement mode power field effect transistors are using trench DMOS

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VSM120N04-SS Shenzhen VSEEI Semiconductor Co., Ltd Description These N-Channel enhancement mode power field effect transistors are using trench DMOS

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