.
VSEEI
BTA312-800B - TRIACS
BTB12-800BW/BTA312-800B/BTA212-800E Shenzhen VSEEI Semiconductor Co., Ltd DESCRIPTION: With high ability to withstand the shock loading of large curr.
VSEEI
BTA316-600B0 - Triacs
BTB16-600BW/BTA316-600B/BTA316-600B0 Shenzhen VSEEI Semiconductor Co., Ltd DESCRIPTION: With high ability to withstand the shock loading of large cur.
VSEEI
BTA316-600B - Triacs
BTB16-600BW/BTA316-600B/BTA316-600B0 Shenzhen VSEEI Semiconductor Co., Ltd DESCRIPTION: With high ability to withstand the shock loading of large cur.
VSEEI
BTA212-800E - TRIACS
BTB12-800BW/BTA312-800B/BTA212-800E Shenzhen VSEEI Semiconductor Co., Ltd DESCRIPTION: With high ability to withstand the shock loading of large curr.
VSEEI
BTB12-800BW - TRIACS
BTB12-800BW/BTA312-800B/BTA212-800E Shenzhen VSEEI Semiconductor Co., Ltd DESCRIPTION: With high ability to withstand the shock loading of large curr.
VSEEI
BTB16-600BW - Triacs
BTB16-600BW/BTA316-600B/BTA316-600B0 Shenzhen VSEEI Semiconductor Co., Ltd DESCRIPTION: With high ability to withstand the shock loading of large cur.
VSEEI
2SD1899-Z - NPN Transistor
2SD1899-Z-T1 Shenzhen VSEEI Semiconductor Co., Ltd 2SD1899-Z TRANSISTOR (NPN) FEATURES High hFE Low VCE(sat) MAXIMUM RATINGS (Ta=25℃ unless oth.
VSEEI
VST12N100 - MOSFET
Description The VST12N100 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. .
VSEEI
VSM50N15 - MOSFET
Description TheVSM50N15uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety .
VSEEI
VSM120N04-T2 - These N-Channel enhancement mode power field effect transistors
VSM120N04-SS Shenzhen VSEEI Semiconductor Co., Ltd Description These N-Channel enhancement mode power field effect transistors are using trench DMOS .
VSEEI
VSM120N04-T1 - These N-Channel enhancement mode power field effect transistors
VSM120N04-SS Shenzhen VSEEI Semiconductor Co., Ltd Description These N-Channel enhancement mode power field effect transistors are using trench DMOS .