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VG2617400FJ - CMOS DRAM

General Description

or 3.3V only power supply.

The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits.

Key Features

  • Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply.
  • High speed tRAC access time : 50/60 ns.
  • Low power dissipation - Active mode : 5V version 605/550 mW (Max. ) 3.3V version 396/360 mW (Max. ) - Standby mode : 5V version 1.375 mW (Max. ) 3.3V version 0.54 mW (Max. ).
  • Fast Page Mode access.
  • I/O level : TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V).
  • 2048 refresh cycles in 32 ms (Std) or 128ms (S - version).
  • 4 refresh mode :.

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Datasheet Details

Part number VG2617400FJ
Manufacturer Vanguard International Semiconductor
File Size 514.57 KB
Description CMOS DRAM
Datasheet download datasheet VG2617400FJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com VIS Description or 3.3V only power supply. Low voltage operation is more suitable to be used on battery VG26(V)(S)17400FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported and very slow CBR cycles are being performed. It is packaged in JEDEC standard 26/24 - pin plastic SOJ or TSOP (II). Features • Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply • High speed tRAC access time : 50/60 ns • Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.