Datasheet4U Logo Datasheet4U.com

VG2617400FJ Datasheet - Vanguard International Semiconductor

CMOS DRAM

VG2617400FJ Features

* Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply

* High speed tRAC access time : 50/60 ns

* Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.) - Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.)

VG2617400FJ General Description

or 3.3V only power supply. Low voltage operation is more suitable to be used on battery VG26(V)(S)17400FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate f.

VG2617400FJ Datasheet (514.57 KB)

Preview of VG2617400FJ PDF

Datasheet Details

Part number:

VG2617400FJ

Manufacturer:

Vanguard International Semiconductor

File Size:

514.57 KB

Description:

Cmos dram.

📁 Related Datasheet

VG2617400D CMOS DRAM (Vanguard International Semiconductor)

VG2617405 CMOS DRAM (Vanguard Microelectronics Limited)

VG2617405F CMOS DRAM (Vanguard Microelectronics Limited)

VG2617405FJ CMOS DRAM (Vanguard International Semiconductor)

VG2618160CJ CMOS DRAM (Vanguard Microelectronics Limited)

VG2618165C CMOS DRAM (Vanguard Microelectronics Limited)

VG2618165D CMOS DRAM (Vanguard Microelectronics Limited)

VG26S17400D CMOS DRAM (Vanguard International Semiconductor)

VG26S17400E CMOS Dynamic RAM (Vanguard International Semiconductor)

VG26S17400FJ CMOS DRAM (Vanguard International Semiconductor)

TAGS

VG2617400FJ CMOS DRAM Vanguard International Semiconductor

Image Gallery

VG2617400FJ Datasheet Preview Page 2 VG2617400FJ Datasheet Preview Page 3

VG2617400FJ Distributor