VG2617400D
Overview
VG26(V)(S)17400D 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply.
- Single 5V ( ± 10 %) or 3.3V ( ± 10 %) only power supply
- High speed tRAC access time : 50/60 ns
- Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.) - Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.)
- Fast Page Mode access
- I/O level : TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V)
- 2048 refresh cycles in 32 ms (Std) or 128ms (S - version)
- 4 refresh mode : - RAS only refresh - CAS-before-RAS refresh - Hidden refresh - Self - refresh (S - version) ee DataSh Document:1G5-0126 4 U .com DataSheet Rev.1 Page 1 VIS
