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VG2617400FJ

Manufacturer: Vanguard International Semiconductor

VG2617400FJ datasheet by Vanguard International Semiconductor.

VG2617400FJ datasheet preview

VG2617400FJ Datasheet Details

Part number VG2617400FJ
Datasheet VG2617400FJ_VanguardInternationalSemiconductor.pdf
File Size 514.57 KB
Manufacturer Vanguard International Semiconductor
Description CMOS DRAM
VG2617400FJ page 2 VG2617400FJ page 3

VG2617400FJ Overview

or 3.3V only power supply. Low voltage operation is more suitable to be used on battery VG26(V)(S)17400FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only backup, portable electronic application.

VG2617400FJ Key Features

  • Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply
  • High speed tRAC access time : 50/60 ns
  • Low power dissipation
  • Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.)
  • Fast Page Mode access
  • I/O level : TTL patible (Vcc = 5V) LVTTL patible (Vcc = 3.3V)
  • 2048 refresh cycles in 32 ms (Std) or 128ms (S
  • version)
  • 4 refresh mode
  • RAS only refresh
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