VG26S17400E Description
VG26(V)(S)17400E 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application.
VG26S17400E Key Features
- Single 5V (±10 %) or 3.3V (±10 %) only power supply
- High speed tRAC access time : 50/60 ns
- Low power dissipation
- Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.)
- Fast Page Mode access
- I/O level : TTL patible (Vcc = 5V)
- 2048 refresh cycles in 32 ms (Std) or 128ms (S
- version