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VG36128161A - CMOS Synchronous Dynamic RAM

Description

The device is CMOS Synchronous Dynamic RAM organized as 8,388,608 - word x 4 -bit x 4 - bank, 4,194,304 - word x 8 - bit x 4 - bank, or 2,097,152 - word x 16 - bit x 4 - bank.

Features

  • Single 3.3V ( ± 0.3V) power supply.
  • High speed clock cycle time : 7.5ns/10ns.
  • Fully synchronous with all signals referenced to a positive clock edge.
  • Programmable CAS Iatency (2,3).
  • Programmable burst length (1,2,4,8,& Full page).
  • Programmable wrap sequence (Sequential/Interleave).
  • Automatic precharge and controlled precharge.
  • Auto refresh and self refresh modes.
  • Quad Internal banks controlled by BA0 & BA1 (Bank s.

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Datasheet Details

Part number VG36128161A
Manufacturer Vanguard International Semiconductor
File Size 940.96 KB
Description CMOS Synchronous Dynamic RAM
Datasheet download datasheet VG36128161A Datasheet
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VIS Description Preliminary VG36128401A VG36128801A VG36128161A CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 8,388,608 - word x 4 -bit x 4 - bank, 4,194,304 - word x 8 - bit x 4 - bank, or 2,097,152 - word x 16 - bit x 4 - bank. These various organizations provide wide choice for different applications. It is designed with the state-of-the-art technology to meet standard PC100 or high speed PC133 requirement. Four internal independent banks greatly increase the performance efficiency. It is packaged in JEDEC standard pinout and standard plastic 54-pin TSOP package. Features • Single 3.3V ( ± 0.3V) power supply • High speed clock cycle time : 7.
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