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VG3664321412BT - CMOS Synchronous Dynamic RAM

Description

The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively.

Features

  • Single 3.3V ( ± 0.3V ) power supply.
  • High speed clock cycle time : 8/10 for LVTTL.
  • High speed clock cycle time : 8/10 for SSTL - 3.
  • Fully synchronous with all signals referenced to a positive clock edge.
  • Programmable CAS Iatency (2,3).
  • Programmable burst length (1,2,4,8,& Full page).
  • Programmable wrap sequence (Sequential/Interleave).
  • Automatic precharge and controlled precharge.
  • Auto refresh and self refresh modes.

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Datasheet preview – VG3664321412BT

Datasheet Details

Part number VG3664321412BT
Manufacturer Vanguard International Semiconductor
File Size 0.96 MB
Description CMOS Synchronous Dynamic RAM
Datasheet download datasheet VG3664321412BT Datasheet
Additional preview pages of the VG3664321412BT datasheet.

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Full PDF Text Transcription

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VIS Description Preliminary VG3664321(4)1(2)BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is packaged in JEDEC standard pinout and standard plastic TSOP package. Features • Single 3.3V ( ± 0.
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