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VG26S18160CJ - CMOS DRAM

Download the VG26S18160CJ datasheet PDF (VG2618160CJ included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for cmos dram.

Description

The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits.

It is fabrionly or 3.3V only power supply.

Features

  • Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply.
  • High speed tRAC access time : 50/60 ns.
  • Low power dissipation - Active mode : 5V version 605/550 mW (Max. ) 3.3V version 396/360 mW (Max. ) - Standby mode : 5V version 1.375 mW (Max. ) 3.3V version 0.54 mW (Max. ).
  • Fast Page Mode access.
  • I/O level : TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V).
  • 1024 refresh cycles in 16 ms (Std) or 128ms (S - version).
  • 4 refresh mode :.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VG2618160CJ_VanguardMicroelectronicsLimited.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VG26S18160CJ
Manufacturer Vanguard Microelectronics Limited
File Size 485.78 KB
Description CMOS DRAM
Datasheet download datasheet VG26S18160CJ Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com VIS Description The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits. It is fabrionly or 3.3V only power supply. Low voltage operation is more suitable to be used on battery VG26(V)(S)18160CJ 1,048,576 x 16 - Bit CMOS Dynamic RAM cated with an advanced submicron CMOS technology and designed to operate from a single 5V backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported and very slow CBR cycles are being performed. It is packaged in JEDEC standard 42 - pin plastic SOJ. Features • Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply • High speed tRAC access time : 50/60 ns • Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.
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