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VG26S17400E Datasheet CMOS Dynamic Ram

Manufacturer: Vanguard International Semiconductor

Overview: VIS.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

VG26(V)(S)17400E 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits.

It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply.

Low voltage operation is more suitable to be used on battery backup, portable electronic application.

Key Features

  • Single 5V (±10 %) or 3.3V (±10 %) only power supply.
  • High speed tRAC access time : 50/60 ns.
  • Low power dissipation - Active mode : 5V version 605/550 mW (Max. ) 3.3V version 396/360 mW (Max. ) - Standby mode : 5V version 1.375 mW (Max. ) 3.3V version 0.54 mW (Max. ).
  • Fast Page Mode access.
  • I/O level : TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V).
  • 2048 refresh cycles in 32 ms (Std) or 128ms (S - version.

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