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VG26S17400E - CMOS Dynamic RAM

This page provides the datasheet information for the VG26S17400E, a member of the VG26S17400EJ-5 CMOS Dynamic RAM family.

Description

The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits.

It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply.

Features

  • Single 5V (±10 %) or 3.3V (±10 %) only power supply.
  • High speed tRAC access time : 50/60 ns.
  • Low power dissipation - Active mode : 5V version 605/550 mW (Max. ) 3.3V version 396/360 mW (Max. ) - Standby mode : 5V version 1.375 mW (Max. ) 3.3V version 0.54 mW (Max. ).
  • Fast Page Mode access.
  • I/O level : TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V).
  • 2048 refresh cycles in 32 ms (Std) or 128ms (S - version.

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Datasheet preview – VG26S17400E

Datasheet Details

Part number VG26S17400E
Manufacturer Vanguard International Semiconductor
File Size 209.13 KB
Description CMOS Dynamic RAM
Datasheet download datasheet VG26S17400E Datasheet
Additional preview pages of the VG26S17400E datasheet.

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Full PDF Text Transcription

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VIS Description VG26(V)(S)17400E 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported and very slow CBR cycles are being performed. It is packaged in JEDEC standard 26/24 - pin plastic SOJ or TSOP (II). Features • Single 5V (±10 %) or 3.3V (±10 %) only power supply • High speed tRAC access time : 50/60 ns • Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.) - Standby mode : 5V version 1.375 mW (Max.
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