Description
VG26(V)(S)17400E 4,194,304 x 4 - Bit CMOS Dynamic RAM
The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits.It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply.Low voltage operation is more suitable to be used on battery backup, portable electronic application.A new refresh feature called “ self-refresh “ is supported and very slow CBR cycles are being performed.It is packaged in JEDE.
Features
- Single 5V (±10 %) or 3.3V (±10 %) only power supply.
- High speed tRAC access time : 50/60 ns.
- Low power dissipation
- Active mode : 5V version 605/550 mW (Max. ) 3.3V version 396/360 mW (Max. )
- Standby mode : 5V version 1.375 mW (Max. ) 3.3V version 0.54 mW (Max. ).
- Fast Page Mode access.
- I/O level : TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V).
- 2048 refresh cycles in 32 ms (Std) or 128ms (S - version.
